公开(公告)号：US20150311085A1

公开(公告)日：2015-10-29

申请号：US14259179

申请日：2014-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Eric S. Kozarsky ,  Shiv Kumar Mishra

IPC: H01L21/308 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L21/3086 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0657

Abstract: Approaches for providing a fin field effect transistor device (FinFET) with a planar block area to enable variable fin pitch and width are disclosed. Specifically, approaches are provided for forming a plurality of fins patterned from a substrate, the plurality of fins comprising: a first set of fins having a variable pitch and a variable width; and a second set of fins having a variable pitch and a uniform width, wherein the first set of fins is adjacent the second set of fins. In one approach, the first set of fins is patterned from the planar block area, which is formed over the substrate, and the second set of fins is formed using a sidewall image transfer (SIT) process.

Abstract translation: 公开了一种用于提供具有平面块区域以实现可变翅片间距和宽度的翅片场效应晶体管器件（FinFET）的方法。 具体地，提供了用于形成从基板图案化的多个翅片的方法，所述多个翅片包括：具有可变间距和可变宽度的第一组翅片; 以及具有可变间距和均匀宽度的第二组翅片，其中所述第一组翅片邻近所述第二组翅片。 在一种方法中，第一组鳍片从形成在衬底上的平面块区域图案化，并且第二组鳍片使用侧壁图像转印（SIT）工艺形成。

公开(公告)号：US09236269B2

公开(公告)日：2016-01-12

申请号：US14259179

申请日：2014-04-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Eric S. Kozarsky ,  Shiv Kumar Mishra

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/308 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L21/3086 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0657

Abstract: Approaches for providing a fin field effect transistor device (FinFET) with a planar block area to enable variable fin pitch and width are disclosed. Specifically, approaches are provided for forming a plurality of fins patterned from a substrate, the plurality of fins comprising: a first set of fins having a variable pitch and a variable width; and a second set of fins having a variable pitch and a uniform width, wherein the first set of fins is adjacent the second set of fins. In one approach, the first set of fins is patterned from the planar block area, which is formed over the substrate, and the second set of fins is formed using a sidewall image transfer (SIT) process.

Abstract translation: 公开了一种用于提供具有平面块区域以实现可变翅片间距和宽度的翅片场效应晶体管器件（FinFET）的方法。 具体地，提供了用于形成从基板图案化的多个翅片的方法，所述多个翅片包括：具有可变间距和可变宽度的第一组翅片; 以及具有可变间距和均匀宽度的第二组翅片，其中所述第一组翅片邻近所述第二组翅片。 在一种方法中，第一组鳍片从形成在衬底上的平面块区域图案化，并且第二组鳍片使用侧壁图像转印（SIT）工艺形成。