公开(公告)号：US20200058515A1

公开(公告)日：2020-02-20

申请号：US16662091

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Heng YANG ,  David C. PRITCHARD ,  George J. KLUTH ,  Anurag MITTAL ,  Hongru REN ,  Manjunatha G. PRABHU ,  Kai SUN ,  Neha NAYYAR ,  Lixia LEI

IPC: H01L21/308 ,  H01L27/12 ,  H01L29/66 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.

公开(公告)号：US20200127013A1

公开(公告)日：2020-04-23

申请号：US16168414

申请日：2018-10-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： David PRITCHARD ,  Heng YANG ,  Hongru REN

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/08 ,  H01L29/66 ,  H01L21/027 ,  H01L21/762

Abstract: The present disclosure relates to an isolation region between semiconductor devices and methods of fabrication. Embodiments include device having a silicon-on-insulator (SOI) substrate; a dummy gate between two metal gates formed over the SOI substrate, the dummy gate providing a physical diffusion break between the two metal gates; raised source/drain (S/D) regions formed on sides of the metal gates; and interlayer dielectric formed over the dummy gate, raised S/D regions and metal gates and in openings on sides of the dummy gate.