公开(公告)号：US09231079B1

公开(公告)日：2016-01-05

申请号：US14304017

申请日：2014-06-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Johannes M. van Meer ,  Cuiqin Xu ,  Isabelle Ferain

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/324 ,  H01L21/266

CPC classification number: H01L29/7847 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/32 ,  H01L29/6659 ,  H01L29/66628

Abstract: One illustrative method disclosed herein includes, among other things, performing a source/drain extension ion implantation to form a doped extension implant region in the source/drain regions of the device, performing an ion implantation process on the source/drain regions with a Group VII material (e.g., fluorine), after performing the Group VII material ion implantation process, forming a capping material layer above the source/drain regions, and, with the capping material layer in position, performing an anneal process so as to form stacking faults in the source/drain regions.

Abstract translation: 本文公开的一种说明性方法包括进行源极/漏极扩展离子注入以在器件的源极/漏极区域中形成掺杂的延伸注入区域，在源极/漏极区域上执行离子注入工艺 VII材料（例如氟），在进行第VII族材料离子注入工艺之后，在源极/漏极区域上方形成覆盖材料层，并且在覆盖材料层就位的情况下，进行退火处理以形成堆垛层错 在源/漏区。

公开(公告)号：US20150364570A1

公开(公告)日：2015-12-17

申请号：US14304017

申请日：2014-06-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Johannes M. van Meer ,  Cuiqin Xu ,  Isabelle Ferain

IPC: H01L29/66 ,  H01L21/324 ,  H01L21/266 ,  H01L29/78

CPC classification number: H01L29/7847 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/32 ,  H01L29/6659 ,  H01L29/66628

Abstract: One illustrative method disclosed herein includes, among other things, performing a source/drain extension ion implantation to form a doped extension implant region in the source/drain regions of the device, performing an ion implantation process on the source/drain regions with a Group VII material (e.g., fluorine), after performing the Group VII material ion implantation process, forming a capping material layer above the source/drain regions, and, with the capping material layer in position, performing an anneal process so as to form stacking faults in the source/drain regions.

Abstract translation: 本文公开的一种说明性方法包括进行源极/漏极扩展离子注入以在器件的源极/漏极区域中形成掺杂的延伸注入区域，在源极/漏极区域上执行离子注入工艺 VII材料（例如氟），在进行第VII族材料离子注入工艺之后，在源极/漏极区域上方形成覆盖材料层，并且在覆盖材料层就位的情况下，进行退火处理以形成堆垛层错 在源/漏区。