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公开(公告)号:US20180130712A1
公开(公告)日:2018-05-10
申请号:US15839243
申请日:2017-12-12
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Ryan SPORER , Rohit PAL , Jeremy WAHL
IPC: H01L21/8234 , H01L29/66 , H01L27/092 , H01L21/3105 , H01L21/762 , H01L21/8238 , H01L27/088
CPC classification number: H01L21/823431 , H01L21/31053 , H01L21/76224 , H01L21/823821 , H01L27/0886 , H01L27/0924 , H01L29/6653 , H01L29/66795
Abstract: Methods for forming fins with a straight profile by preventing fin bending during STI fill and annealing are disclosed. Embodiments include providing STI regions separated by Si regions, each topped with a hardmask; planarizing the STI regions; removing the hardmask over a portion of the Si regions, forming recesses; forming a conformal spacer layer over the STI regions and in the recesses; removing horizontal portions of the spacer layer; epitaxially growing Si in each recess, forming fins; and etching the STI regions and a remainder of the spacer layer down to the Si regions to reveal the fins.