公开(公告)号：US20180337033A1

公开(公告)日：2018-11-22

申请号：US15596437

申请日：2017-05-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani PANDEY ,  Srikanth Balaji SAMAVEDAM ,  Jui-Hsuan FENG

IPC: H01L21/02

CPC classification number: H01L21/0243 ,  H01L21/02019 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/02518 ,  H01L21/02658 ,  H01L21/823418 ,  H01L21/823481 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7856

Abstract: Devices and methods of fabricating devices are provided. One method includes: patterning an isolation gate disposed above a trench, the trench extending into a substrate; patterning a gate structure disposed above the substrate and adjacent the isolation gate; depositing a set of sidewall spacers on either side of the isolation gate and gate structure; etching a set of cavities between the isolation gate and gate structure and extending into the substrate; and epitaxially growing a set of epitaxial growths in the set of cavities, wherein the isolation gate is wider than the gate structure, and wherein epitaxial growths adjacent the isolation gate substantially conform to an oxide layer between the isolation gate and the trench, contacting at least a portion of a bottom surface and at least a portion of a side surface of the oxide layer.