公开(公告)号：US20150093887A1

公开(公告)日：2015-04-02

申请号：US14253668

申请日：2014-04-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Bin Yang ,  Shurong Liang ,  Kristina Young-Fisher ,  Kevin Kashefi ,  Amol Joshi ,  Salil Mujumdar ,  Abhijit Pethe ,  Albert Lee ,  Ashish Bodke

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/28255 ,  H01L21/02046 ,  H01L21/2807 ,  H01L21/31116 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a NF3/NH3 plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.

Abstract translation: 在各种示例性实施例中提供了用于制造集成电路的方法。 在一个实施例中，一种用于制造集成电路的方法包括提供锗基半导体衬底，其包括在其上形成的具有第一厚度的GeO x层，通过将半导体衬底暴露于NF3 / NH3等离子体干蚀刻来去除GeOx层的一部分 以便将GeO x层的第一厚度减小到第二厚度，并且在半导体衬底的GeO x层上沉积高k材料。

公开(公告)号：US20190229079A1

公开(公告)日：2019-07-25

申请号：US15876734

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Scott Pozder ,  Thiagarajan Raman ,  Kristina Young-Fisher ,  David Stone

IPC: H01L23/00

Abstract: Bond pad structures and methods for fabricating bond pad structures. A bond pad and a plurality of fill lines are formed on the top surface of a dielectric layer. The fill lines are arranged on the top surface of the dielectric layer adjacent to the bond pad, and may be separated from the bond pad by a fill keep-out zone. One or more Under Bump Metallurgy (UBM) layers may be arranged on the bond pad and may extend outwardly to overlap with the fill lines.

公开(公告)号：US10566300B2

公开(公告)日：2020-02-18

申请号：US15876734

申请日：2018-01-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Scott Pozder ,  Thiagarajan Raman ,  Kristina Young-Fisher ,  David Stone

IPC: H01L29/00 ,  H01L23/00

Abstract: Bond pad structures and methods for fabricating bond pad structures. A bond pad and a plurality of fill lines are formed on the top surface of a dielectric layer. The fill lines are arranged on the top surface of the dielectric layer adjacent to the bond pad, and may be separated from the bond pad by a fill keep-out zone. One or more Under Bump Metallurgy (UBM) layers may be arranged on the bond pad and may extend outwardly to overlap with the fill lines.