公开(公告)号：US20190181215A1

公开(公告)日：2019-06-13

申请号：US15834443

申请日：2017-12-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Atsushi Ogino ,  Lin Hu ,  Brian Greene

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/311

Abstract: Device structures and fabrication methods for an on-chip resistor. A resistor body is formed on an interlayer dielectric layer of a contact level. A contact is formed that extends vertically through the interlayer dielectric layer. One or more dielectric layers are formed over the contact level, and a metal feature is formed in the one or more dielectric layers. The metal feature is at least in part in direct contact with a portion of the resistor body.

公开(公告)号：US10566411B2

公开(公告)日：2020-02-18

申请号：US15834443

申请日：2017-12-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Atsushi Ogino ,  Lin Hu ,  Brian Greene

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/768

Abstract: Device structures and fabrication methods for an on-chip resistor. A resistor body is formed on an interlayer dielectric layer of a contact level. A contact is formed that extends vertically through the interlayer dielectric layer. One or more dielectric layers are formed over the contact level, and a metal feature is formed in the one or more dielectric layers. The metal feature is at least in part in direct contact with a portion of the resistor body.