公开(公告)号：US20170062609A1

公开(公告)日：2017-03-02

申请号：US15351753

申请日：2016-11-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lyndon R. Logan ,  Edward J. Nowak ,  Robert R. Robison

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/66545 ,  H01L29/66803 ,  H01L29/66818 ,  H01L29/7835 ,  H01L29/785

Abstract: Devices and methods for a high voltage FinFET with a shaped drift region include a lateral diffusion metal oxide semiconductor (LDMOS) FinFET having a substrate with a top surface and a fin attached to the top surface. The fin includes a source region having a first type of doping, an undoped gate-control region adjacent the source region, a drift region adjacent the undoped gate-control region opposite the source region, and a drain region. The amount of doping of the source region is greater than the amount of doping in the drift region. The drain region is adjacent to the drift region and has the same type of doping. The fin is tapered in the drift region, being wider closest to the undoped gate-control region and thinner closest to the drain region. A gate stack is attached to the top surface of the substrate and located with the undoped gate-control region.

Abstract translation: 具有成形漂移区域的高电压FinFET的装置和方法包括具有顶部表面的衬底和附接到顶表面的鳍的横向扩散金属氧化物半导体（LDMOS）FinFET。 散热片包括具有第一类掺杂的源极区域，与源极区域相邻的未掺杂栅极控制区域，与源极区域相对的未掺杂栅极控制区域相邻的漂移区域和漏极区域。 源极区域的掺杂量大于漂移区域中的掺杂量。 漏极区域与漂移区域相邻并且具有相同类型的掺杂。 翅片在漂移区域逐渐变细，最接近未掺杂的栅极控制区域更宽，最靠近漏极区域更薄。 栅极堆叠被附着到衬底的顶表面并且与未掺杂的栅极控制区域一起定位。

公开(公告)号：US09972550B2

公开(公告)日：2018-05-15

申请号：US14873677

申请日：2015-10-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Edward J. Nowak ,  Robert R. Robison ,  Lyndon R. Logan

IPC: H01L31/062 ,  H01L29/66 ,  G06F17/50 ,  H01L21/66 ,  H01L27/088 ,  G01B7/00

CPC classification number: H01L22/34 ,  G01B7/00 ,  G01B7/02 ,  H01L21/823425 ,  H01L21/823431 ,  H01L22/32 ,  H01L27/0886

Abstract: A source/drain epitaxial electrical monitor and methods of characterizing epitaxial growth through capacitance measurements are provided. The structure includes a plurality of fin structures; one or more gate structures, perpendicular to and intersecting the plurality of fin structures. The structure further includes a first connection by a first contact at one fin-end of every other fin structure of the plurality of fin structures, and a second connection by a second contact at one end of an alternate fin structure of the plurality of fin structures.