公开(公告)号：US20150243789A1

公开(公告)日：2015-08-27

申请号：US14711029

申请日：2015-05-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。

公开(公告)号：US08823138B1

公开(公告)日：2014-09-02

申请号：US13937332

申请日：2013-07-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/00 ,  H01L49/02

CPC classification number: H01L28/20

Abstract: A semiconductor structure includes a resistor. The resistor includes a semiconductor region, a dielectric layer, a first electrical connection and a second electrical connection. The dielectric layer is provided on the semiconductor region and includes a high-k material having a greater dielectric constant than silicon dioxide. The dielectric layer includes a species creating fixed charges. A first electrical connection is provided at a first end of the semiconductor region and a second electrical connection is provided at a second end of the semiconductor region.

Abstract translation: 半导体结构包括电阻器。 电阻器包括半导体区域，电介质层，第一电连接和第二电连接。 电介质层设置在半导体区域上，并且包括具有比二氧化硅更大的介电常数的高k材料。 电介质层包括产生固定电荷的物质。 在半导体区域的第一端处提供第一电连接，并且在半导体区域的第二端设置第二电连接。

公开(公告)号：US09236482B2

公开(公告)日：2016-01-12

申请号：US14711029

申请日：2015-05-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。

公开(公告)号：US20150008536A1

公开(公告)日：2015-01-08

申请号：US13936824

申请日：2013-07-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。

公开(公告)号：US08921904B2

公开(公告)日：2014-12-30

申请号：US14032567

申请日：2013-09-20

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Peter Baars ,  Matthias Goldbach

IPC: H01L21/28 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor devices and related fabrication methods are provided. An exemplary fabrication method involves forming a pair of gate structures having a dielectric region disposed between a first gate structure of the pair and a second gate structure of the pair, and forming a voided region in the dielectric region between the first gate structure and the second gate structure. The first and second gate structures each include a first gate electrode material, wherein the method continues by removing the first gate electrode material to provide second and third voided regions corresponding to the gate structures and forming a second gate electrode material in the first voided region, the second voided region, and the third voided region.

Abstract translation: 提供了半导体器件和相关的制造方法。 示例性的制造方法包括形成一对栅极结构，其具有布置在该对的第一栅极结构和该对的第二栅极结构之间的介质区域，并且在第一栅极结构和第二栅极结构之间的介电区域中形成空隙区域 门结构。 第一和第二栅极结构各自包括第一栅极电极材料，其中该方法通过去除第一栅电极材料继续，以提供对应于栅极结构的第二和第三空隙区域，并在第一空隙区域中形成第二栅电极材料， 第二空隙区域和第三空隙区域。

公开(公告)号：US09064900B2

公开(公告)日：2015-06-23

申请号：US13936824

申请日：2013-07-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/02 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。