公开(公告)号：US20170278965A1

公开(公告)日：2017-09-28

申请号：US15079142

申请日：2016-03-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani PANDEY ,  Pei ZHAO ,  Zhenyu HU

IPC: H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/08 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851

Abstract: Methods to reduce a width of a channel region of Si fins and the resulting devices are disclosed. Embodiments include forming a Si fin in a Si layer; forming a channel region over the Si fin including a dummy gate with a spacer on each side; forming S/D regions at opposite ends of the Si fin; removing the dummy gate, forming a cavity; thinning sidewalls of the Si fin; and forming a high-k/metal gate in the cavity.