公开(公告)号：US08610281B1

公开(公告)日：2013-12-17

申请号：US13633234

申请日：2012-10-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Andy T. Nguyen ,  Kuldeep Amarnath ,  Ravi P. Gutala

IPC: H01L23/52

CPC classification number: H01L23/481 ,  H01L23/5223 ,  H01L25/0657 ,  H01L27/0694 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and structures for a double-sided semiconductor structure using through-silicon vias (TSVs) are disclosed. The double-sided structure has functional circuits on both the front and back sides, interconnected by one or more TSVs. In some embodiments, multiple double-sided structures are combined to create 3D semiconductor structures with increased circuit density.

Abstract translation: 公开了使用硅通孔（TSV）的双面半导体结构的方法和结构。 双面结构在前后两侧具有功能电路，由一个或多个TSV互连。 在一些实施例中，组合多个双面结构以产生具有增加的电路密度的3D半导体结构。