公开(公告)号：US08610281B1

公开(公告)日：2013-12-17

申请号：US13633234

申请日：2012-10-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Andy T. Nguyen ,  Kuldeep Amarnath ,  Ravi P. Gutala

IPC: H01L23/52

CPC classification number: H01L23/481 ,  H01L23/5223 ,  H01L25/0657 ,  H01L27/0694 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and structures for a double-sided semiconductor structure using through-silicon vias (TSVs) are disclosed. The double-sided structure has functional circuits on both the front and back sides, interconnected by one or more TSVs. In some embodiments, multiple double-sided structures are combined to create 3D semiconductor structures with increased circuit density.

Abstract translation: 公开了使用硅通孔（TSV）的双面半导体结构的方法和结构。 双面结构在前后两侧具有功能电路，由一个或多个TSV互连。 在一些实施例中，组合多个双面结构以产生具有增加的电路密度的3D半导体结构。

公开(公告)号：US20150270346A1

公开(公告)日：2015-09-24

申请号：US14731644

申请日：2015-06-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kuldeep Amarnath ,  Michael Hargrove ,  Srikanth Samavedam

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/423

CPC classification number: H01L29/1033 ,  H01L29/0847 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/7848

Abstract: Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define an initial gate opening having sidewalls and to expose a surface of the substrate and performing an etching process on the exposed surface of the substrate to define a recessed channel in the substrate. The method includes the additional steps of forming a sidewall spacer within the initial gate opening on the sidewalls of the initial gate opening to thereby define a final gate opening and forming a replacement gate structure in the final gate opening.

Abstract translation: 本文公开了形成具有凹陷沟道区域的替换栅极结构的各种方法。 在一个示例中，该方法包括在半导体衬底之上形成牺牲栅极结构，去除牺牲栅极结构，从而限定具有侧壁的初始栅极开口并暴露衬底的表面，并在衬底的暴露表面上执行蚀刻工艺 衬底以在衬底中限定凹陷通道。 该方法包括在初始栅极开口的侧壁上的初始栅极开口内形成侧壁间隔物以由此限定最终栅极开口并在最终栅极开口中形成替换栅极结构的附加步骤。