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1.发明授权Adjusting configuration of a multiple gate transistor by controlling individual fins 有权通过控制单个散热片来调整多栅极晶体管的配置公开(公告)号：US09035306B2
公开(公告)日：2015-05-19
申请号：US13869162
申请日：2013-04-24
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Jan Hoentschel , Robert Mulfinger , Vassilios Papageorgiou
CPC classification number: H01L23/58 , H01L21/845 , H01L27/1211 , H01L29/66795 , H01L29/785 , H01L2924/0002 , H01L2924/00
Abstract: In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable interconnect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices.
Abstract translation: 在复杂的半导体器件中，FINFET元件可以设置有单独可访问的半导体鳍片，其可以连接到可控制的互连结构，以适当地调整晶体管配置，例如关于电流驱动能力，替换有缺陷的半导体鳍片等。 因此，可以在标准晶体管单元架构的基础上获得不同的晶体管配置，这可能导致在形成非平面晶体管器件时高度复杂的制造策略的生产成本增加。
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2.发明申请ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLING INDIVIDUAL FINS 审中-公开通过控制个人FINS调整多个门控晶体管的配置公开(公告)号：US20130306967A1
公开(公告)日：2013-11-21
申请号：US13869162
申请日：2013-04-24
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Jan Hoentschel , Robert Mulfinger , Vassilios Papageorgiou
IPC: H01L23/58
CPC classification number: H01L23/58 , H01L21/845 , H01L27/1211 , H01L29/66795 , H01L29/785 , H01L2924/0002 , H01L2924/00
Abstract: In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable interconnect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices.
Abstract translation: 在复杂的半导体器件中，FINFET元件可以设置有单独可访问的半导体鳍片，其可以连接到可控制的互连结构，以适当地调整晶体管配置，例如关于电流驱动能力，替换有缺陷的半导体鳍片等。 因此，可以在标准晶体管单元架构的基础上获得不同的晶体管配置，这可能导致在形成非平面晶体管器件时高度复杂的制造策略的生产成本增加。
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