公开(公告)号：US10312356B1

公开(公告)日：2019-06-04

申请号：US16013363

申请日：2018-06-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qizhi Liu ,  Vibhor Jain ,  James W. Adkisson ,  Sarah McTaggart ,  Mark Levy

IPC: H01L31/0328 ,  H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/423 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/265

Abstract: Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.