公开(公告)号：US10312356B1

公开(公告)日：2019-06-04

申请号：US16013363

申请日：2018-06-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qizhi Liu ,  Vibhor Jain ,  James W. Adkisson ,  Sarah McTaggart ,  Mark Levy

IPC: H01L31/0328 ,  H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/423 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/265

Abstract: Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.

公开(公告)号：US10833072B1

公开(公告)日：2020-11-10

申请号：US16404161

申请日：2019-05-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Siva P. Adusumilli ,  Anthony K. Stamper ,  Mark Levy ,  Vibhor Jain ,  John J. Ellis-Monaghan

IPC: H01L27/082 ,  H01L29/737 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L21/8222 ,  H01L21/225 ,  H01L21/311 ,  H01L27/06 ,  H01L21/762 ,  H01L23/544

Abstract: Structures for a heterojunction bipolar transistor and methods of fabricating such structures. A hardmask is formed that includes an opening over a first portion of a substrate in a first device region and a shape over a second portion of the substrate in a second device region. An oxidized region in the first portion of the substrate while the shape blocks oxidation of the second portion of the substrate. The oxidized region is subsequently removed from the first portion of the substrate to define a recess. A first base and a first emitter of a first heterojunction bipolar transistor are formed over the first portion of the substrate in the first device region, and a second base and a second emitter of a second heterojunction bipolar transistor are formed in the recess over the second portion of the substrate in the second device region.