公开(公告)号：US20190019726A1

公开(公告)日：2019-01-17

申请号：US15647977

申请日：2017-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Errol Todd RYAN ,  Sean Xuan LIN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

Abstract: Devices and methods of fabricating devices are provided. One method includes: obtaining an intermediate semiconductor device having a dielectric layer, an insulating layer, and a plurality of metal lines, including a liner material and a first metal material; recessing the metal material of each metal line forming a set of cavities; filling the cavities with a protective cap; etching the protective cap and the liner material in the set of cavities; depositing a plurality of dielectric caps in the set of cavities; depositing an interlayer dielectric layer over the insulating layer and the plurality of dielectric caps; patterning a via in the interlayer dielectric layer; and depositing a lining and a second metal material in the interconnect area; wherein the second metal material is electrically insulated from the first metal in at least one of the plurality of metal lines.

公开(公告)号：US20180269150A1

公开(公告)日：2018-09-20

申请号：US15983168

申请日：2018-05-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean Xuan LIN ,  Xunyuan ZHANG ,  Shao Beng LAW ,  James Jay McMahon

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.