公开(公告)号：US20180144976A1

公开(公告)日：2018-05-24

申请号：US15360255

申请日：2016-11-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shao Beng LAW ,  Xunyuan ZHANG ,  Frank W. MONT ,  Genevieve BEIQUE ,  Lei SUN

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L23/528 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/76816 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/5283

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.

公开(公告)号：US20180269150A1

公开(公告)日：2018-09-20

申请号：US15983168

申请日：2018-05-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean Xuan LIN ,  Xunyuan ZHANG ,  Shao Beng LAW ,  James Jay McMahon

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.