公开(公告)号：US20180322912A1

公开(公告)日：2018-11-08

申请号：US15585709

申请日：2017-05-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stefan Duenkel ,  Ralf Illgen ,  Ralf Richter ,  Soeren Jansen

IPC: G11C11/22 ,  H01L29/78 ,  G11C16/04 ,  G11C16/06

CPC classification number: G11C11/225 ,  G11C16/0466 ,  G11C16/06 ,  H01L29/78391 ,  H01L29/7841

Abstract: The present disclosure provides storage elements, such as storage transistors, wherein at least one storage mechanism is provided on the basis of a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, one further storage mechanism is implemented in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism in the gate electrode structure is provided in the form of a ferroelectric material.

公开(公告)号：US10176859B2

公开(公告)日：2019-01-08

申请号：US15585709

申请日：2017-05-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stefan Duenkel ,  Ralf Illgen ,  Ralf Richter ,  Soeren Jansen

IPC: G11C16/24 ,  G11C11/22 ,  H01L29/78 ,  G11C16/04 ,  G11C16/06

Abstract: The present disclosure provides storage elements, such as storage transistors, wherein at least one storage mechanism is provided on the basis of a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, one further storage mechanism is implemented in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism in the gate electrode structure is provided in the form of a ferroelectric material.