公开(公告)号：US09508597B1

公开(公告)日：2016-11-29

申请号：US14858154

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zuoguang Liu ,  Xin Sun ,  Tenko Yamashita

IPC: H01L21/8234 ,  H01L29/08 ,  H01L29/06 ,  H01L29/49 ,  H01L27/088 ,  H01L29/10

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823425 ,  H01L27/0886 ,  H01L29/0657 ,  H01L29/0834 ,  H01L29/1033 ,  H01L29/495 ,  H01L29/66356 ,  H01L29/7391

Abstract: A method for forming a tunneling field effect transistor includes forming gate structures over a semiconductor fin on a substrate having at least two pitches between the gate structures and recessing the fin between the gate structures. A first dielectric layer is deposited over the fin to fill in a first gap between the gate structures having a smaller pitch therebetween. A second gap between the gate structures having a larger pitch is filled with a second dielectric layer. The first gap is opened by etching the first dielectric layer while the second dielectric layer protects from opening the second gap. A source region is formed on the fin in the first gap. A dielectric fills the source region in the first gaps. The second gap is opened by etching the second dielectric layer and the first dielectric layer. A drain region is formed on the fin in the second gap.

Abstract translation: 形成隧道场效应晶体管的方法包括在半导体鳍片上形成栅极结构，该栅极结构在基板上形成，栅极结构之间具有至少两个间距，并且在栅极结构之间使翅片凹陷。 第一电介质层沉积在鳍片上以填充栅极结构之间的间距较小的第一间隙。 具有较大间距的栅极结构之间的第二间隙被第二介电层填充。 通过蚀刻第一介电层来打开第一间隙，而第二介电层保护不会打开第二间隙。 源区域形成在第一间隙中的翅片上。 电介质填充第一间隙中的源极区域。 通过蚀刻第二介电层和第一介电层来打开第二间隙。 漏极区域形成在第二间隙中的鳍片上。