公开(公告)号：US11610837B2

公开(公告)日：2023-03-21

申请号：US17027661

申请日：2020-09-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Xuesong Rao ,  Benfu Lin ,  Bo Li ,  Chengang Feng ,  Yudi Setiawan ,  Yun Ling Tan

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device is provided, which includes a dielectric layer and a via structure. The dielectric layer is arranged over a substrate. The via structure is arranged in the dielectric layer, the via structure having a peripheral portion and a central portion. The peripheral portion of the via structure has a height that is greater than that of the central portion.