公开(公告)号：US12266671B2

公开(公告)日：2025-04-01

申请号：US17507213

申请日：2021-10-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Eric Linardy ,  Eng Huat Toh ,  Ping Zheng ,  Kiok Boone Elgin Quek

IPC: H01L27/146 ,  H10F39/00 ,  H10F39/18

Abstract: Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.

公开(公告)号：US20230065063A1

公开(公告)日：2023-03-02

申请号：US17410025

申请日：2021-08-24

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Ping Zheng ,  Eng Huat Toh ,  Eric Linardy ,  Kiok Boone Elgin Quek

IPC: H01L27/146

Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.

公开(公告)号：US12183754B2

公开(公告)日：2024-12-31

申请号：US17410025

申请日：2021-08-24

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Ping Zheng ,  Eng Huat Toh ,  Eric Linardy ,  Kiok Boone Elgin Quek

IPC: H01L27/146 ,  H01L31/107

Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.

公开(公告)号：US20230131505A1

公开(公告)日：2023-04-27

申请号：US17507213

申请日：2021-10-21

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Eric Linardy ,  Eng Huat Toh ,  Ping Zheng ,  Kiok Boone Elgin Quek

IPC: H01L27/146

Abstract: Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.