公开(公告)号：US20210288205A1

公开(公告)日：2021-09-16

申请号：US16817691

申请日：2020-03-13

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Sandipta ROY ,  Khee Yong LIM ,  Lanxiang WANG ,  Kiok Boone Elgin QUEK ,  Jing Hua Michelle TNG

IPC分类号： H01L31/107 ,  H01L29/861 ,  H01L29/66 ,  H01L31/18

摘要： According to various embodiments, there is provided a diode device including a semiconductor substrate of a first conductivity type, a first semiconductor region formed within the semiconductor substrate, an epitaxial region of the first conductivity type, and a second semiconductor region of a second conductivity type different from the first conductivity type. The first semiconductor region includes a chalcogen. The epitaxial region is formed over the first semiconductor region. The second semiconductor region is formed over the epitaxial region.