公开(公告)号：US09871132B1

公开(公告)日：2018-01-16

申请号：US15236494

申请日：2016-08-15

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Kun Liu ,  Xiaoping Wang ,  Francis Lionel Benistant ,  Li Cao

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L21/768 ,  H01L29/10

CPC classification number: H01L29/7816 ,  H01L21/76897 ,  H01L29/402 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

Abstract: Devices and methods for forming a device are disclosed. A transistor is formed on the substrate. The transistor includes a gate, a source and a drain. An insulation layer is formed on the substrate. The insulation layer is partially disposed on the gate and a sidewall of the gate. The drain is offset from the gate by the insulation layer. An overlayer is formed on the substrate covering the transistor and insulation layer. A field plate in the form of a field plate contact is formed in the overlayer. The field plate contact is disposed on and coupled to the insulation layer for mitigating the formation of electric field adjacent to drain side of the gate.