-
公开(公告)号:US11935678B2
公开(公告)日:2024-03-19
申请号:US17117258
申请日:2020-12-10
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor: Zishan Ali Syed Mohammed , Lulu Peng , Chor Shu Cheng , Yong Chau Ng , Lawrence Selvaraj Susai
CPC classification number: H01F17/0013 , H01F27/022 , H01F27/28 , H01L28/10
Abstract: An inductive device may be provided, including a first winding layer, a second winding layer arranged over the first winding layer and connected to the first winding layer to form a plurality of turns around a first axis, and a magnetic core arranged vertically between the first winding layer and the second winding layer. The magnetic core may include a portion entirely over the first winding layer and entirely under the second winding layer, where this portion may include a magnetic segment and a non-magnetic segment arranged laterally adjacent to each other along the first axis.
-
公开(公告)号:US12068359B2
公开(公告)日:2024-08-20
申请号:US16601632
申请日:2019-10-15
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor: Lawrence Selvaraj Susai , Chor Shu Cheng , Yong Chau Ng , Lulu Peng , Zishan Ali Syed Mohammed , Nuraziz Yosokumoro
CPC classification number: H01L28/10 , H01L23/3157 , H01L23/645
Abstract: A semiconductor device may include: a substrate; a protective region provided over the substrate; and a core structure enclosed by the protective region. The core structure may include a core material etchable by a chemical solution. The protective region may include a protective material resistant to etching by the chemical solution. The core structure may have a first side and a second side opposite to the first side, the first side being closer to the substrate than the second side. The core structure may be narrowest at the first side of the core structure.
-
公开(公告)号:US11538751B2
公开(公告)日:2022-12-27
申请号:US17010841
申请日:2020-09-03
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor: Lulu Peng , Nur Aziz Yosokumoro , Zishan Ali Syed Mohammed , Lawrence Selvaraj Susai , Chor Shu Cheng , Yong Chau Ng
IPC: H01L23/522 , H01L49/02
Abstract: A semiconductor device is provided. The semiconductor device comprises an inductor in a far back end of line layer and a capacitor adjacent to and electrically coupled with the inductor. The capacitor comprises a first electrode layer arranged over sidewalls and a bottom surface of a via in a first insulating layer A dielectric layer is provided over the first electrode layer. A second electrode layer is provided over the dielectric layer and a metal fill layer is provided over the second electrode layer. The metal fill layer has a top surface at least level with a top surface of the first insulating layer.
-
-