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公开(公告)号:US09570545B2
公开(公告)日:2017-02-14
申请号:US14692768
申请日:2015-04-22
发明人: Yemin Dong , Liang Yi , Zhanfeng Liu , Purakh Raj Verma , Ramadas Nambatyathu
CPC分类号: H01L29/063 , H01L27/0922 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66704 , H01L29/66719 , H01L29/66734 , H01L29/7809 , H01L29/7813 , H01L29/7825
摘要: A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having a gate electrode, first and second gate dielectric layers is formed in a trench. The trench has an upper trench portion and a lower trench portion. A field plate is formed in the trench. First and second diffusion regions are formed. The gate is displaced from the second diffusion region.
摘要翻译: 公开了一种形成装置的方法。 提供了用设备区域定义的衬底。 在沟槽中形成具有栅极电极,第一和第二栅极电介质层的栅极。 沟槽具有上沟槽部分和下沟槽部分。 在沟槽中形成场板。 形成第一和第二扩散区。 栅极从第二扩散区域移位。
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公开(公告)号:US09054133B2
公开(公告)日:2015-06-09
申请号:US13948178
申请日:2013-07-23
发明人: Yemin Dong , Liang Yi , Zhanfeng Liu , Purakh Raj Verma , Ramadas Nambatyathu
IPC分类号: H01L21/336 , H01L29/66 , H01L29/78 , H01L29/40 , H01L29/423 , H01L27/092 , H01L29/417 , H01L29/06 , H01L29/08
CPC分类号: H01L29/063 , H01L27/0922 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66704 , H01L29/66719 , H01L29/66734 , H01L29/7809 , H01L29/7813 , H01L29/7825
摘要: A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having a gate electrode, first and second gate dielectric layers is formed in a trench. The trench has an upper trench portion and a lower trench portion. A field plate is formed in the trench. First and second diffusion regions are formed. The gate is displaced from the second diffusion region.
摘要翻译: 公开了一种形成装置的方法。 提供了用设备区域定义的衬底。 在沟槽中形成具有栅极电极,第一和第二栅极电介质层的栅极。 沟槽具有上沟槽部分和下沟槽部分。 在沟槽中形成场板。 形成第一和第二扩散区。 栅极从第二扩散区域移位。
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