公开(公告)号：US20240297216A1

公开(公告)日：2024-09-05

申请号：US18659282

申请日：2024-05-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anthony K. STAMPER ,  Siva P. ADUSUMILLI ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L21/764

CPC classification number: H01L29/0649 ,  H01L21/02505 ,  H01L21/7624 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor on insulator substrate with cavity structures and methods of manufacture. The structure includes: a bulk substrate with at least one rectilinear cavity structure; an insulator material sealing the at least one rectilinear cavity structure; and a buried insulator layer on the bulk substrate and over the at least one rectilinear cavity structure.

公开(公告)号：US20220093731A1

公开(公告)日：2022-03-24

申请号：US17028178

申请日：2020-09-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. STAMPER ,  Siva P. ADUSUMILLI ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor on insulator substrate with cavity structures and methods of manufacture. The structure includes: a bulk substrate with at least one rectilinear cavity structure; an insulator material sealing the at least one rectilinear cavity structure; and a buried insulator layer on the bulk substrate and over the at least one rectilinear cavity structure.

公开(公告)号：US20220068975A1

公开(公告)日：2022-03-03

申请号：US17003179

申请日：2020-08-26

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Anthony K. STAMPER ,  Bruce W. PORTH ,  John J. ELLIS-MONAGHAN

IPC: H01L27/12 ,  H01L29/06 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions includes multiple cavity structures and substrate material of the bulk substrate.