公开(公告)号：US20220406833A1

公开(公告)日：2022-12-22

申请号：US17896401

申请日：2022-08-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Vibhor JAIN ,  Alvin J. JOSEPH ,  Steven M. SHANK

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.

公开(公告)号：US20220238646A1

公开(公告)日：2022-07-28

申请号：US17157269

申请日：2021-01-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Johnatan A. KANTAROVSKY ,  Vibhor JAIN

IPC: H01L29/06 ,  H01L29/08 ,  H01L27/07 ,  H01L27/06 ,  H01L21/308 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgap structures in a doped region under one or more transistors and methods of manufacture. The structure includes: a semiconductor material comprising a doped region; one or more sealed airgap structures breaking up the doped region of the semiconductor material; and a field effect transistor over the one or more sealed airgap structures and the semiconductor material.

公开(公告)号：US20220115329A1

公开(公告)日：2022-04-14

申请号：US17070377

申请日：2020-10-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Johnatan A. KANTAROVSKY ,  Vibhor JAIN ,  Siva P. ADUSUMILLI ,  Ajay RAMAN ,  Sebastian T. VENTRONE ,  Yves T. NGU

IPC: H01L23/552 ,  H01L23/00 ,  H01L49/02 ,  H01L23/522

Abstract: The present disclosure relates to integrated circuits, and more particularly, to an anti-tamper x-ray blocking package for secure integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: one or more devices on a front side of a semiconductor material; a plurality of patterned metal layers under the one or more devices, located and structured to protect the one or more devices from an active intrusion; an insulator layer between the plurality of patterned metal layers; and at least one contact providing an electrical connection through the semiconductor material to a front side of the plurality of metals.

公开(公告)号：US20210376180A1

公开(公告)日：2021-12-02

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Mark D. LEVY ,  Vibhor JAIN ,  Andre STURM

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/0312 ,  H01L31/028 ,  H01L31/036

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

公开(公告)号：US20210257454A1

公开(公告)日：2021-08-19

申请号：US16791214

申请日：2020-02-14

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Rajendran KRISHNASAMY ,  Steven M. SHANK ,  Vibhor JAIN

IPC: H01L29/08 ,  H01L29/49 ,  H01L29/737 ,  H01L29/66 ,  H01L29/16

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor having one or more sealed airgap and methods of manufacture. The structure includes: a subcollector region in a substrate; a collector region above the substrate; a sealed airgap formed at least partly in the collector region; a base region adjacent to the collector region; and an emitter region adjacent to the base region.

公开(公告)号：US20230317627A1

公开(公告)日：2023-10-05

申请号：US17707273

申请日：2022-03-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Siva P. ADUSUMILLI ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L23/552 ,  H01L29/737 ,  H01L29/06 ,  H01L21/764

CPC classification number: H01L23/552 ,  H01L29/7371 ,  H01L29/0649 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.

公开(公告)号：US20220399372A1

公开(公告)日：2022-12-15

申请号：US17344391

申请日：2021-06-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. STAMPER ,  Uzma RANA ,  Siva P. ADUSUMILLI ,  Steven M. SHANK

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L21/28 ,  H01L21/285 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure comprising source/drain regions; and at least one isolation structure perpendicular to the at least one gate structure and within the source/drain regions.

公开(公告)号：US20220352210A1

公开(公告)日：2022-11-03

申请号：US17306078

申请日：2021-05-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20220171123A1

公开(公告)日：2022-06-02

申请号：US17108732

申请日：2020-12-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Yusheng BIAN

IPC: G02B6/122 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a waveguide structure with attenuator and methods of manufacture. The structure includes: a waveguide structure including semiconductor material; an attenuator underneath the waveguide structure; an airgap structure vertically aligned with and underneath the waveguide structure and the attenuator; and shallow trench isolation structures on sides of the waveguide structure and merging with the airgap structure.

公开(公告)号：US20220028971A1

公开(公告)日：2022-01-27

申请号：US16939213

申请日：2020-07-27

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Uzma RANA ,  Anthony K. STAMPER ,  Johnatan A. KANTAROVSKY ,  Steven M. SHANK ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with an embedded isolation layer in a bulk substrate and methods of manufacture. The structure includes: a bulk substrate; an isolation layer embedded within the bulk substrate and below a top surface of the bulk substrate; a deep trench isolation structure extending through the bulk substrate and contacting the embedded isolation layer; and a gate structure over the top surface of the bulk substrate and vertically spaced away from the embedded isolation layer, the deep trench isolation structure and the embedded isolation layer defining an active area of the gate structure in the bulk substrate.