公开(公告)号：US11222844B2

公开(公告)日：2022-01-11

申请号：US16899543

申请日：2020-06-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jun Lian ,  Sipeng Gu ,  Haiting Wang ,  Yanping Shen

IPC: H01L23/522 ,  H01L43/12 ,  H01L43/02 ,  H01L45/00 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11585

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. The present disclosure provides a semiconductor device including a first device region and a second device region. The first device region includes a first metal layer, a first via structure over the first metal layer, a second via structure over the first via structure, and a second metal layer over the second via structure. The first via structure and the second via structure electrically couple the second metal layer to the first metal layer. The second device region includes a third metal layer, a contact structure over the third metal layer, a memory cell structure over the contact structure, and a fourth metal layer over the memory cell structure. The first via structure and the contact structure are made of the same material.