公开(公告)号：US12142516B2

公开(公告)日：2024-11-12

申请号：US17678437

申请日：2022-02-23

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Nicholas V. LiCausi ,  Guillaume Bouche ,  Lars W. Liebmann

IPC: H01L21/74 ,  H01L23/528 ,  H01L23/535 ,  H01L27/088 ,  H01L27/092 ,  H10B12/00 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

公开(公告)号：US11101169B2

公开(公告)日：2021-08-24

申请号：US16244387

申请日：2019-01-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Nicholas V. LiCausi

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02

Abstract: Structures that include interconnects and methods for forming a structure that includes interconnects. A metallization level has a first interconnect, a second interconnect, and a cavity with an entrance between the first interconnect and the second interconnect. A first dielectric layer includes a first section arranged on the first interconnect adjacent to the entrance of the cavity and a second section arranged on the second interconnect adjacent to the entrance of the cavity. A second dielectric layer is formed on the first section of the first dielectric layer and the second section of the first dielectric layer. The second dielectric layer extends from the first section of the first dielectric layer to the second section of the first dielectric layer and across the entrance to the cavity to close an airgap between the first interconnect and the second interconnect.