公开(公告)号：US11417525B2

公开(公告)日：2022-08-16

申请号：US16154284

申请日：2018-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Martin O'Toole ,  Keith Donegan ,  Brendan O'Brien ,  Hsueh-Chung Chen ,  Terry A. Spooner ,  Craig Child ,  Sean Reidy ,  Ravi Prakash Srivastava ,  Louis Lanzerotti ,  Atsushi Ogino

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/768

Abstract: Methods of self-aligned multiple patterning. A hardmask is deposited over an interlayer dielectric layer. A mandrel is formed over the hardmask. A block mask is formed that covers a first lengthwise section of the mandrel and that exposes second and third lengthwise sections of the mandrel. After forming the block mask, the second and third lengthwise sections of the mandrel are removed to define a pattern including respective first and second mandrel lines that are separated from each other by the first lengthwise section of the mandrel. The first mandrel line and the second mandrel line expose respective portions of the hardmask, and the first lengthwise section of the mandrel line covers another portion of the hardmask. The pattern is transferred to the hardmask with an etching process, and subsequently transferred to the interlayer dielectric layer with another etching process.

公开(公告)号：US11101170B2

公开(公告)日：2021-08-24

申请号：US16509947

申请日：2019-07-12

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Motoi Ichihashi ,  Atsushi Ogino

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a dual airgap structure and methods of manufacture. The structure includes: a lower metal line; a plurality of upper metal lines; and a first airgap between the lower metal line and at least one upper metal line of the plurality of upper metal lines.