公开(公告)号：US11367790B2

公开(公告)日：2022-06-21

申请号：US16551794

申请日：2019-08-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anupam Dutta ,  Balaji Swaminathan

IPC: G01R31/00 ,  G01R31/26 ,  G01R31/28 ,  H01L21/84 ,  H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  G06F30/367

Abstract: Test structures for a body-contacted field effect transistor (BCFET) include: a single-pad structure with body contact and probe pad regions connected to a channel region at first and second connection points with a known separation distance between the connection points; and a multi-pad structure with a body contact region connected to a channel region at a first connection point and multiple probe pad regions connected to the channel region at second connection points that are separated from the first connection point by different separation distances. A method includes: determining separation distance-dependent internal body potentials at the second connection points in response to different bias conditions by using either multiple single-pad structures, each having a different separation distance between the connection points, or by using a multi-pad structure; and based on the separation distance-dependent internal body potentials, generating a model representing the BCFET with body-contacted and floating body devices.