公开(公告)号：US11719773B2

公开(公告)日：2023-08-08

申请号：US17375166

申请日：2021-07-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant M. Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane ,  Eng Huat Toh

IPC: G01R33/09 ,  G01R33/00

CPC classification number: G01R33/098 ,  G01R33/0005 ,  G01R33/093

Abstract: A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

公开(公告)号：US20230014455A1

公开(公告)日：2023-01-19

申请号：US17375166

申请日：2021-07-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant M. Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane ,  Eng Huat Toh

IPC: G01R33/09 ,  G01R33/00

Abstract: A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

公开(公告)号：US11682514B2

公开(公告)日：2023-06-20

申请号：US16997065

申请日：2020-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane

IPC: H01F10/32 ,  H10B61/00 ,  H10N50/80 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3254 ,  H01F10/329 ,  H01F10/3286 ,  H10B61/00 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

公开(公告)号：US20220059754A1

公开(公告)日：2022-02-24

申请号：US16997065

申请日：2020-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01F10/32

Abstract: An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.