公开(公告)号：US10923469B2

公开(公告)日：2021-02-16

申请号：US16244169

申请日：2019-01-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hui Zang ,  Guowei Xu ,  Jiehui Shu ,  Ruilong Xie ,  Yurong Wen ,  Garo J. Derderian ,  Shesh M. Pandey ,  Laertis Economikos

IPC: H01L27/06 ,  H01L29/66 ,  H01L49/02 ,  H01L21/762 ,  H01L23/522 ,  H01L29/40 ,  H01L29/78

Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.

公开(公告)号：US11456382B2

公开(公告)日：2022-09-27

申请号：US16664056

申请日：2019-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Laertis Economikos ,  Shesh Mani Pandey ,  Hui Zang ,  Haiting Wang ,  Jinping Liu

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66

Abstract: A transistor device disclosed herein includes, among other things, a gate electrode positioned above a semiconductor material region, a sidewall spacer positioned adjacent the gate electrode, a gate insulation layer having a first portion positioned between the gate electrode and the semiconductor material region and a second portion positioned between a lower portion of the sidewall spacer and the gate electrode along a portion of a sidewall of the gate electrode, an air gap cavity located between the sidewall spacer and the gate electrode and above the second portion of the gate insulation layer, and a gate cap layer positioned above the gate electrode, wherein the gate cap layer seals an upper end of the air gap cavity so as to define an air gap positioned adjacent the gate electrode.