公开(公告)号：US10923469B2

公开(公告)日：2021-02-16

申请号：US16244169

申请日：2019-01-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hui Zang ,  Guowei Xu ,  Jiehui Shu ,  Ruilong Xie ,  Yurong Wen ,  Garo J. Derderian ,  Shesh M. Pandey ,  Laertis Economikos

IPC: H01L27/06 ,  H01L29/66 ,  H01L49/02 ,  H01L21/762 ,  H01L23/522 ,  H01L29/40 ,  H01L29/78

Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.

公开(公告)号：US20240234305A1

公开(公告)日：2024-07-11

申请号：US18150831

申请日：2023-01-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh M. Pandey ,  Anindya Nath ,  Alain F. Loiseau ,  Souvick Mitra ,  Chung F. Tan ,  Judson R. Holt

IPC: H01L23/525 ,  H01L23/34 ,  H01L23/62

CPC classification number: H01L23/5256 ,  H01L23/345 ,  H01L23/62

Abstract: A structure includes: an electrically programmable fuse (e-fuse) including an anode and a cathode; at least one transistor positioned adjacent the e-fuse; and an electrically conductive interconnect coupling the cathode of the e-fuse to the at least one transistor, wherein the at least one transistor includes at least one semiconductor fin extending perpendicularly to the e-fuse.