公开(公告)号：US11651992B2

公开(公告)日：2023-05-16

申请号：US17145555

申请日：2021-01-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haigou Huang ,  Yuping Ren ,  Paul Ackmann ,  Guoxiang Ning

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/283 ,  H01L21/311

CPC classification number: H01L21/76808 ,  H01L21/0276 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76879

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.