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公开(公告)号：US11658177B2
公开(公告)日：2023-05-23
申请号：US17113473
申请日：2020-12-07
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Anthony K. Stamper , Michel J. Abou-Khalil , John J. Ellis-Monaghan , Randy Wolf , Alvin J. Joseph , Aaron Vallett
CPC classification number: H01L27/0285 , H01L27/0218 , H01L29/0619 , H01L29/0649
Abstract: Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a device region. The substrate contact is configured to be biased with a negative bias voltage. A field-effect transistor includes a semiconductor body in the device region of the bulk semiconductor substrate. The semiconductor body is electrically isolated from the portion of the bulk semiconductor substrate.
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公开(公告)号：US20220181317A1
公开(公告)日：2022-06-09
申请号：US17113473
申请日：2020-12-07
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Anthony K. Stamper , Michel J. Abou-Khalil , John J. Ellis-Monaghan , Randy Wolf , Alvin J. Joseph , Aaron Vallett
Abstract: Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a device region. The substrate contact is configured to be biased with a negative bias voltage. A field-effect transistor includes a semiconductor body in the device region of the bulk semiconductor substrate. The semiconductor body is electrically isolated from the portion of the bulk semiconductor substrate.
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