公开(公告)号：US11916135B2

公开(公告)日：2024-02-27

申请号：US17587347

申请日：2022-01-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel Ontalus ,  Justin C. Long ,  Robert K. Baiocco

IPC: H01L29/73 ,  H01L29/732 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/66287

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base region and comprising semiconductor material and a hardmask surrounding a lower portion of the semiconductor material.