公开(公告)号：US20210151443A1

公开(公告)日：2021-05-20

申请号：US16689330

申请日：2019-11-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC: H01L27/11 ,  H01L21/8239 ,  H01L21/8238

Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.

公开(公告)号：US11037937B2

公开(公告)日：2021-06-15

申请号：US16689330

申请日：2019-11-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC: H01L27/11 ,  H01L21/8238 ,  H01L21/8239

Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.