公开(公告)号：US11309319B2

公开(公告)日：2022-04-19

申请号：US16984468

申请日：2020-08-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Randy W. Mann ,  Bipul C. Paul ,  Julien Frougier ,  Ruilong Xie

IPC: H01L27/11 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092

Abstract: Structures and static random access memory bit cells including complementary field effect transistors and methods of forming such structures and bit cells. A first complementary field-effect transistor has a first storage nanosheet transistor, a second storage nanosheet transistor stacked over the first storage nanosheet transistor, and a first gate electrode shared by the first storage nanosheet transistor and the second storage nanosheet transistor. A second complementary field-effect transistor has a third storage nanosheet transistor, a fourth storage nanosheet transistor stacked over the third storage nanosheet transistor, and a second gate electrode shared by the third storage nanosheet transistor and the fourth storage nanosheet transistor. The first gate electrode and the second gate electrode are arranged in a spaced arrangement along a longitudinal axis. All gate electrodes of the SRAM bitcell may be arranged in a 1CPP layout.

公开(公告)号：US20210151443A1

公开(公告)日：2021-05-20

申请号：US16689330

申请日：2019-11-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC: H01L27/11 ,  H01L21/8239 ,  H01L21/8238

Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.

公开(公告)号：US11037937B2

公开(公告)日：2021-06-15

申请号：US16689330

申请日：2019-11-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC: H01L27/11 ,  H01L21/8238 ,  H01L21/8239

Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.