公开(公告)号：US11107880B2

公开(公告)日：2021-08-31

申请号：US16408536

申请日：2019-05-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Dewei Xu ,  Sunil K. Singh ,  Siva R. Dangeti ,  Seung-Yeop Kook

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/283 ,  H01L21/02

Abstract: Embodiments of the disclosure provide a capacitor structure for an integrated circuit (IC), and methods to form the capacitor structure. The capacitor structure may include: a first ring electrode in an inter-level dielectric (ILD) layer on a substrate; an inner electrode positioned within the first ring electrode; and a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer.