公开(公告)号：US09866971B2

公开(公告)日：2018-01-09

申请号：US15305089

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo Zou ,  Zhe Wang ,  Jifang Tao ,  Guanxun Qiu

IPC: H04R25/00 ,  H04R19/02 ,  H04R7/06 ,  H04R31/00 ,  H04R19/01 ,  B81B7/00 ,  B81C1/00

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.