公开(公告)号：US06747838B2

公开(公告)日：2004-06-08

申请号：US09893130

申请日：2001-06-27

申请人： Garry E. Korbel ,  Ranjeet K. Pancholy ,  Hakam D. Hussein

发明人： Garry E. Korbel ,  Ranjeet K. Pancholy ,  Hakam D. Hussein

IPC分类号： G11B5596

CPC分类号： G11B33/144 ,  G11B5/5521

摘要： An apparatus and associated method used to control a disc drive having at least one disc and a transducer positionable relative to the disc by a motor. The motor receives energization through at least one power switch integrated on a semiconductor circuit. Temperature of the circuit is sensed proximate the power switch. A temperature signal is provided which is indicative of whether the sensed temperature meets one of a plurality of different threshold temperatures. The power switch is controlled in one of a plurality of different control modes based upon the temperature signal.

摘要翻译： 一种用于控制具有至少一个盘的盘驱动器和通过马达相对于盘定位的换能器的装置和相关联的方法。 电机通过集成在半导体电路上的至少一个电源开关接收通电。 在电源开关附近感应电路的温度。 提供了温度信号，其指示所感测的温度是否满足多个不同阈值温度中的一个。 基于温度信号，将电源开关控制在多种不同控制模式之一中。

公开(公告)号：US4302278A

公开(公告)日：1981-11-24

申请号：US159465

申请日：1980-06-16

申请人： Ranjeet K. Pancholy ,  Rene Drouet

发明人： Ranjeet K. Pancholy ,  Rene Drouet

IPC分类号： C30B33/00 ,  H01L21/316 ,  H01L21/203

CPC分类号： H01L21/31616 ,  C30B29/42 ,  C30B33/00 ,  H01L21/02112 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/02269 ,  Y10S438/976

摘要： Reheating the cooled wafer product of the known method of forming thermal oxide surface passivation layers on GaAs crystal wafers, i.e. heating the wafer in contact with thermally vaporized As.sub.2 O.sub.3 in a substantially oxygen free closed vessel at a reaction temperature in excess of 450 degrees, from a temperature lower than the reaction temperature to a temperature higher than the reaction temperature and in the presence of free oxygen increases the compositional, physical and electrical uniformity of the surface layer.

摘要翻译： 将在GaAs晶体晶片上形成热氧化物表面钝化层的已知方法的已冷却的晶片产品加热，即在反应温度超过450度的基本上不含氧的密封容器中加热与热蒸发的As 2 O 3接触的晶片， 低于反应温度的温度至高于反应温度的温度，并且在游离氧的存在下，表面层的组成，物理和电学均匀性增加。

公开(公告)号：US4172906A

公开(公告)日：1979-10-30

申请号：US796120

申请日：1977-05-11

申请人： Ranjeet K. Pancholy

发明人： Ranjeet K. Pancholy

IPC分类号： H01L21/314 ,  H01L21/265 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/02241 ,  H01L21/02255 ,  H01L21/2654 ,  H01L21/31666 ,  Y10S148/084 ,  Y10S438/958

摘要： High quality native surface passivation dielectrics on Group III-Group V compound semiconductors are produced by thermal conversion of a surface layer having a specially provided composition. The electrical properties of these dielectrics meet the requirements for dielectric and passivation layers over semiconductor devices generally and in field effect devices in particular.

摘要翻译： 通过具有特别提供的组成的表面层的热转化制备III-V族化合物半导体上的高质量天然表面钝化电介质。 这些电介质的电性能一般满足半导体器件上的电介质层和钝化层的要求，特别是在场效应器件中。

公开(公告)号：US4170666A

公开(公告)日：1979-10-09

申请号：US796118

申请日：1977-05-11

申请人： Ranjeet K. Pancholy ,  Gordon J. Kuhlmann ,  D. Howard Phillips

发明人： Ranjeet K. Pancholy ,  Gordon J. Kuhlmann ,  D. Howard Phillips

IPC分类号： H01L21/314 ,  H01L21/265 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/02241 ,  H01L21/02255 ,  H01L21/2654 ,  H01L21/31666

摘要： III-V compound semiconductors having native dielectrics thereon which are thermally grown from special composition surface layers thereof are provided with reduced surface recombination velocities by proper selection of the surface layer's composition and extent of conversion to the dielectric.

摘要翻译： 通过适当选择表面层的组成和向电介质的转化程度，在其上由其特殊组成表面层热生长的具有天然电介质的III-V族化合物半导体具有降低的表面复合速度。