METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY
    3.
    发明申请
    METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY 有权
    加工半导体组件的方法

    公开(公告)号:US20140094025A1

    公开(公告)日:2014-04-03

    申请号:US13630231

    申请日:2012-09-28

    IPC分类号: H01L21/225

    摘要: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).

    摘要翻译: 提出了一种处理半导体组件的方法。 该方法包括:(a)使半导体组件的至少一部分与硫属元素源接触,其中半导体组件包括半导体层,该半导体层包括设置在支撑体上的半导体材料; (b)将硫属元素从硫族元素源引入到半导体材料的至少一部分中; 和(c)在步骤(b)之后在半导体层上设置窗口层。