TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE
    1.
    发明申请
    TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE 有权
    等离子体处理基板的技术

    公开(公告)号:US20110309049A1

    公开(公告)日:2011-12-22

    申请号:US13157005

    申请日:2011-06-09

    摘要: Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

    摘要翻译: 公开了用于等离子体处理衬底的技术。 在一个特定的示例性实施例中,可以通过包括将进料气体接近等离子体源的方法来实现,其中进料气体可以包括第一和第二物质,其中第一和第二物质具有不同的电离能; 向所述等离子体源提供多级RF功率波形,其中所述多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平以及在第二脉冲持续时间期间具有第二功率电平,其中所述第二功率电平可以 与第一功率水平不同; 在第一脉冲持续期间电离原料气体的第一种; 在第二脉冲期间电离第二物种; 以及在所述第一脉冲持续时间期间向所述衬底提供偏置。

    CHARGE NEUTRALIZATION IN A PLASMA PROCESSING APPARATUS
    2.
    发明申请
    CHARGE NEUTRALIZATION IN A PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理装置中的充电中和

    公开(公告)号:US20090084987A1

    公开(公告)日:2009-04-02

    申请号:US11863728

    申请日:2007-09-28

    IPC分类号: A61N5/00

    摘要: A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.

    摘要翻译: 等离子体处理装置包括处理室,被配置为在处理室中产生等离子体的源和被构造成在处理室中支撑工件的压板。 压板由具有脉冲ON和OFF时间段的脉冲压板信号偏置,以在脉冲接通时间段期间将离子从等离子体加速到工件,而不是脉冲关闭时间周期。 板位于处理室中。 板被板信号偏置,以将离子从等离子体加速到板,以在脉冲压板信号的脉冲关闭时间周期的至少一部分的至少一部分期间引起来自板的二次电子的发射,以至少部分中和 电荷积累在工件上。

    SDF-1 DELIVERY FOR TREATING ADVANCED ISCHEMIC CARDIOMYOPATHY
    3.
    发明申请
    SDF-1 DELIVERY FOR TREATING ADVANCED ISCHEMIC CARDIOMYOPATHY 审中-公开
    SDF-1交付用于治疗先进的化疗药物治疗

    公开(公告)号:US20170049856A1

    公开(公告)日:2017-02-23

    申请号:US15305369

    申请日:2015-04-28

    IPC分类号: A61K38/19 A61K48/00 A61K9/00

    摘要: Provided herein are methods of treating a cardiomyopathy in a subject by administering directly to, or expressing locally in, a weakened, ischemic, and/or peri-infarct region of myocardial tissue of the subject an amount of SDF-1 effective to cause functional improvement in at least one of the following parameters: left ventricular volume, left ventricular area, left ventricular dimension, cardiac function, 6-minute walk test, or New York Heart Association (NYHA) functional classification. Methods of treating subjects with advanced ischemic cardiomyopathy are further disclosed herein.

    摘要翻译: 本文提供了通过直接施用或表达受试者心肌组织的弱化,缺血和/或梗死周围区域来治疗受试者的心肌病的方法,所述量的SDF-1有效引起功能改善 在以下参数中的至少一个中:左心室容积,左心室面积,左心室尺寸,心脏功能,6分钟步行测试或纽约心脏协会(NYHA)功能分类。 本文进一步公开了治疗晚期缺血性心肌病的患者的方法。