公开(公告)号：US06930308B1

公开(公告)日：2005-08-16

申请号：US10265520

申请日：2002-10-03

申请人： Gian Francesco Lorusso ,  Robert Anthony Watts ,  Alexander Jozef Gubbens ,  Laurence Stuart Hordon

发明人： Gian Francesco Lorusso ,  Robert Anthony Watts ,  Alexander Jozef Gubbens ,  Laurence Stuart Hordon

IPC分类号： G01Q20/00 ,  G01Q30/02 ,  G01N23/00 ,  G01N23/225 ,  G01Q30/04

CPC分类号： G01N23/2251 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/28

摘要： A highly accurate technique for inspecting semiconductor devices is described. The technique involves utilizing multiple sets of measurement data obtained by a scanning electron microscope (SEM) to determine the dimensional parameters of a semiconductor device. The SEM collects each set of data from a different angular orientation with respect to the device. The dimensional parameters of the semiconductor device are determined by analyzing the relationship between the SEM inspection angle and the collected data sets. Various configurations of an SEM can be used to implement this invention. For instance an electron beam inspection system of the present invention can have at least two sets of deflectors for guiding the electron beam, a swiveling specimen stage, and/or a set of detectors set about the specimen at different angular orientations.

摘要翻译： 描述了用于检查半导体器件的高精度技术。 该技术涉及利用扫描电子显微镜（SEM）获得的多组测量数据来确定半导体器件的尺寸参数。 SEM从相对于设备的不同角度取向收集每组数据。 通过分析SEM检查角度与收集的数据集之间的关系来确定半导体器件的尺寸参数。 可以使用SEM的各种构造来实现本发明。 例如，本发明的电子束检查系统可以具有用于引导电子束的至少两组偏转器，旋转样品台和/或在不同角度方向上围绕样本设置的一组检测器。

公开(公告)号：US06784425B1

公开(公告)日：2004-08-31

申请号：US10008253

申请日：2001-11-09

申请人： Gian Francesco Lorusso ,  Laurence Stuart Hordon ,  Sander Josef Gubbens ,  Douglas Keith Masnaghetti

发明人： Gian Francesco Lorusso ,  Laurence Stuart Hordon ,  Sander Josef Gubbens ,  Douglas Keith Masnaghetti

IPC分类号： H01J4700

CPC分类号： H01J37/28 ,  H01J2237/22 ,  H01J2237/2804

摘要： The present invention pertains to a technique of electron spectroscopic imaging that is easy to perform and cost effective. This technique allows for spatial resolution enhancement of electron beam semiconductor inspection systems (for example a critical dimension scanning electron microscope CD-SEM) as well as to obtain useful physical or chemical information on the investigated specimen. The technique involves a high pass energy filter that is alternately set, or multiplexed, at two energies. For an inspected area on a specimen, the detected intensity level at the higher energy setting is subtracted from the intensity level at the lower energy setting. The obtained differential value corresponds to electrons having energy within the range of the first and second filter settings. This obtained differential value is used to generate an image of the specimen for inspection purposes.

摘要翻译： 本发明涉及易于执行和成本有效的电子分光成像技术。 该技术允许电子束半导体检查系统（例如临界尺寸扫描电子显微镜CD-SEM）的空间分辨率增强，以及获得关于被研究样本的有用的物理或化学信息。 该技术涉及在两个能量下交替地设置或多路复用的高通能量滤波器。 对于样本上的检查区域，在较低能量设置下从强度水平减去较高能量设定下的检测强度水平。 获得的微分值对应于具有在第一和第二滤波器设置范围内的能量的电子。 该获得的差分值用于产生用于检查目的的样本的图像。