公开(公告)号：US06930308B1

公开(公告)日：2005-08-16

申请号：US10265520

申请日：2002-10-03

申请人： Gian Francesco Lorusso ,  Robert Anthony Watts ,  Alexander Jozef Gubbens ,  Laurence Stuart Hordon

发明人： Gian Francesco Lorusso ,  Robert Anthony Watts ,  Alexander Jozef Gubbens ,  Laurence Stuart Hordon

IPC分类号： G01Q20/00 ,  G01Q30/02 ,  G01N23/00 ,  G01N23/225 ,  G01Q30/04

CPC分类号： G01N23/2251 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/28

摘要： A highly accurate technique for inspecting semiconductor devices is described. The technique involves utilizing multiple sets of measurement data obtained by a scanning electron microscope (SEM) to determine the dimensional parameters of a semiconductor device. The SEM collects each set of data from a different angular orientation with respect to the device. The dimensional parameters of the semiconductor device are determined by analyzing the relationship between the SEM inspection angle and the collected data sets. Various configurations of an SEM can be used to implement this invention. For instance an electron beam inspection system of the present invention can have at least two sets of deflectors for guiding the electron beam, a swiveling specimen stage, and/or a set of detectors set about the specimen at different angular orientations.

摘要翻译： 描述了用于检查半导体器件的高精度技术。 该技术涉及利用扫描电子显微镜（SEM）获得的多组测量数据来确定半导体器件的尺寸参数。 SEM从相对于设备的不同角度取向收集每组数据。 通过分析SEM检查角度与收集的数据集之间的关系来确定半导体器件的尺寸参数。 可以使用SEM的各种构造来实现本发明。 例如，本发明的电子束检查系统可以具有用于引导电子束的至少两组偏转器，旋转样品台和/或在不同角度方向上围绕样本设置的一组检测器。

公开(公告)号：US07612348B1

公开(公告)日：2009-11-03

申请号：US12125863

申请日：2008-05-22

申请人： Alexander Jozef Gubbens ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Rudy Flores Garcia ,  Doug Keith Masnaghetti

发明人： Alexander Jozef Gubbens ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Rudy Flores Garcia ,  Doug Keith Masnaghetti

IPC分类号： H01J37/18 ,  H01F7/02

CPC分类号： C09K11/773 ,  H01J2237/038 ,  H01J2237/16 ,  H01J2237/26

摘要： A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

摘要翻译： 描述了一种用于在维持在高DC电压的部件和维持在基本上较低电压的部件之间提供高电压隔离的电压隔离通道。 电压隔离通道在其通道上包含横向磁场，这降低了通过通道的带电粒子（例如电子）的势能。 电压隔离通道包括通道和至少两个磁体。 通道具有两个开口，并且两个磁体沿着通道的相对和外表面定位，其中第一和第二磁体相对于通道的纵向轴在横向上施加磁场。 在一个实施例中，每个通道具有小的直径和以小的流速传递气体。 支撑结构将通道和磁体相对于彼此固定就位，并且磁屏蔽件包围部件以防止磁场影响外部部件。

公开(公告)号：US20100123077A1

公开(公告)日：2010-05-20

申请号：US12620979

申请日：2009-11-18

申请人： Paul Mooney ,  Alexander Jozef Gubbens

发明人： Paul Mooney ,  Alexander Jozef Gubbens

IPC分类号： G01N23/04 ,  H01J37/26

CPC分类号： H01J37/26 ,  H01J37/244 ,  H01L27/146

摘要： A simplification of the charge-collection pixel of an imaging detector for high-energy electrons is disclosed, incorporating removal of the buffer amplifier. While sacrificing speed and noise performance of the readout somewhat and therefore appearing counter-intuitive, this configuration has the potential to significantly reduce the susceptibility of the pixel to radiation damage.

摘要翻译： 公开了用于高能电子的成像检测器的电荷收集像素的简化，包括去除缓冲放大器。 尽管有些读取器的速度和噪声性能受损，因此出现反直觉，但是这种配置具有显着降低像素对辐射损伤的敏感性的潜力。

公开(公告)号：US07394339B1

公开(公告)日：2008-07-01

申请号：US10882663

申请日：2004-06-30

申请人： Alexander Jozef Gubbens ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Rudy Flores Garcia ,  Doug Keith Masnaghetti

发明人： Alexander Jozef Gubbens ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Rudy Flores Garcia ,  Doug Keith Masnaghetti

IPC分类号： H01F7/02

CPC分类号： C09K11/773 ,  H01J2237/038 ,  H01J2237/16 ,  H01J2237/26

摘要： A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

摘要翻译： 描述了一种用于在维持在高DC电压的部件和维持在基本上较低电压的部件之间提供高电压隔离的电压隔离通道。 电压隔离通道在其通道上包含横向磁场，这降低了通过通道的带电粒子（例如电子）的势能。 电压隔离通道包括通道和至少两个磁体。 通道具有两个开口，并且两个磁体沿着通道的相对和外表面定位，其中第一和第二磁体相对于通道的纵向轴在横向上施加磁场。 在一个实施例中，每个通道具有小的直径和以小的流速传递气体。 支撑结构将通道和磁体相对于彼此固定就位，并且磁屏蔽件包围部件以防止磁场影响外部部件。

公开(公告)号：US07488938B1

公开(公告)日：2009-02-10

申请号：US11509137

申请日：2006-08-23

申请人： Alexander Jozef Gubbens ,  Mark Borowicz ,  Ye Yang

发明人： Alexander Jozef Gubbens ,  Mark Borowicz ,  Ye Yang

IPC分类号： G01N23/00 ,  H01J37/20 ,  H01J37/22 ,  H01J37/28

CPC分类号： G01N23/2251 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/24495 ,  H01J2237/24592

摘要： One embodiment relates to a method of electron beam imaging of a target area of a substrate. During an imaging phase, an electron beam is controllably scanned over the target area of the substrate, and extracted secondary electrons are detected. An electric field at a surface of the substrate is changed from an original electric field after the imaging phase. During a charge control phase, the electron beam is controllably scanned over the target area of the substrate. The electric field at the surface of the substrate is reverted back to the original electric field after the charge control phase. The imaging and charge control frames are interleaved. Other embodiments and features are also disclosed.

摘要翻译： 一个实施例涉及基板的目标区域的电子束成像方法。 在成像阶段期间，电子束被可控地扫描在衬底的目标区域上，并且检测到提取的二次电子。 在成像阶段之后，基板表面的电场从初始电场变化。 在充电控制阶段期间，电子束被可控地扫描在衬底的目标区域上。 在充电控制阶段之后，将基板表面的电场还原回原电场。 成像和电荷控制帧交错。 还公开了其它实施例和特征。

公开(公告)号：US5798524A

公开(公告)日：1998-08-25

申请号：US684973

申请日：1996-08-07

申请人： Michael Karl Kundmann ,  Alexander Jozef Gubbens ,  Stuart Lawrence Friedman ,  Ondrej L. Krivanek

发明人： Michael Karl Kundmann ,  Alexander Jozef Gubbens ,  Stuart Lawrence Friedman ,  Ondrej L. Krivanek

IPC分类号： G01Q20/04 ,  G01Q30/02 ,  H01J37/05 ,  H01J37/244 ,  H01J37/252 ,  H01J37/26 ,  H01J47/00

CPC分类号： H01J37/05 ,  H01J37/252 ,  H01J37/26 ,  H01J37/265 ,  H01J2237/24485 ,  H01J2237/24585 ,  H01J2237/2826

摘要： An energy filtering system of an EFTEM is automatically adjusted using a computer. The computer inserts an energy-selecting slit into the beam path and begins monitoring the position of the electron beam through a combination of the current sensors integral to the slit and the readout of an electron camera. The beam is centered within the slit by adjusting an energy dispersing element while monitoring beam sensors. After initial alignment, the slit is retracted and a reference aperture is inserted at the entrance to the energy filter. The electron camera captures an image of the reference aperture and the computer analyzes the deviations of the aperture image from its known physical dimensions in order to evaluate the electron optical distortions and aberrations of the filter. The computer uses the determined optical parameters to adjust the distortion and aberration correcting optical elements of the filter, whose effects are known due to previous calibration. After correcting the imaging aberrations, the reference aperture is withdrawn, the slit reinserted, and an isochromatic surface of the filter at the plane of the slit is measured by scanning the beam across a slit edge while integrating the transmitted beam intensity on the electron camera. The isochromatic surface thus collected by the electron camera is analyzed by the computer to extract additional aberration coefficients of the filter system. These measured aberration coefficients are used to make calibrated corrections to the filter optics.

摘要翻译： 使用计算机自动调整EFTEM的能量过滤系统。 计算机将能量选择狭缝插入光束路径中，并开始通过整合到狭缝的电流传感器和电子照相机的读出的组合监视电子束的位置。 通过在监测光束传感器的同时调节能量分散元件，光束在狭缝内居中。 在初始对准之后，狭缝缩回并且在能量过滤器的入口处插入参考孔。 电子摄像机捕获参考光圈的图像，并且计算机分析孔径图像与其已知物理尺寸的偏差，以便评估滤光器的电子光学失真和像差。 计算机使用确定的光学参数来调整滤波器的失真和像差校正光学元件，其由于先前的校准而已知其影响。 在校正成像像差之后，取出参考孔径，重新插入缝隙，并且通过扫描横跨狭缝边缘的光束来测量滤光器在狭缝平面处的等色表面，同时将透射光束强度整合在电子照相机上。 由电子照相机收集的等色表面由计算机分析以提取滤光系统的附加像差系数。 这些测量的像差系数用于对滤光器光学元件进行校准校正。