-
公开(公告)号：US3981071A
公开(公告)日：1976-09-21
申请号：US561940
申请日：1975-03-25
CPC分类号： H01C17/20 , H01C7/04 , Y10T29/49085
摘要： A process for the fabrication of thermistors is described. Conductive wires are positioned in a spaced fashion and are aligned so as to intersect one another. The wires are maintained in the above alignment and placed into a reaction chamber or other suitable environment in which chemical vapor deposition of a semiconductor material by a pyrolysis technique is produced. The temperature of the reaction chamber is preferably just below the temperature level needed to produce the vapor deposition. Electric current is preferably passed through the conductors causing them to heat at the region of the intersections to a level sufficient to induce vapor deposition. The semiconductor material is caused to be deposited upon the conductors in the region of the intersection and is continued until the semiconductor material substantially completely surrounds both of the wires in the region of the intersection so as to mechanically and electrically join the wires. The growth is continued until the thermistor of the desired characteristics is developed. Thereafter, two adjacent leads are removed leaving the remaining two leads projecting from the semiconductor material for use in coupling the thermistor to electrical circuits. The process when completed substantially provides a thermistor device which is ready for use without the need for performing additional steps of providing electrical terminations. The nature of the process also lends itself advantageously for producing thermistors on a large mass production scale.
摘要翻译： 描述了制造热敏电阻的方法。 导电线以间隔的方式定位并且对齐以便彼此相交。 将电线保持在上述对准状态并放置在反应室或其它合适的环境中，其中通过热解技术生产半导体材料的化学气相沉积。 反应室的温度优选低于产生气相沉积所需的温度水平。 优选地，电流通过导体，使得它们在交叉点的区域处加热到足以引起气相沉积的水平。 导致半导体材料沉积在交叉点区域中的导体上，并且继续进行，直到半导体材料基本上完全围绕交叉区域中的两条电线，以便机械地和电连接电线。 继续生长直到所需特性的热敏电阻显影。 此后，去除两个相邻的导线，留下剩余的两个引线从半导体材料突出以用于将热敏电阻耦合到电路。 完成的过程基本上提供了可以使用的热敏电阻器件，而不需要执行附加的提供电端接的步骤。 该方法的性质也有利于在大批量生产规模上生产热敏电阻。
搜索结果
1 条记录 (耗时 0.011 秒)
