摘要:
Disclosed herein is a composition of a sensor element, a temperature sensor having the composition of the sensor element and a method of manufacturing the temperature sensor. The sensor element composition comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3, and further comprising ZrO2 and a temperature sensor comprising the same. The method comprising: weighing the composition for a sensor element; mixing the composition; calcining the mixture at about 1000° C.˜1400° C. for 30 min˜5 hrs; pulverizing the calcined mixture to obtain powder; disposing the powder type mixture into a mold; inserting in parallel a plurality of lead wires into the powder type mixture; pressure molding the powder type mixture; and sintering the pressure molded material at about 1300° C.˜1500° C. for 30 min˜5 hrs.
摘要翻译:本文公开了传感器元件的组成,具有传感器元件的组成的温度传感器和制造温度传感器的方法。 所述传感器元件组合物包含Y 2 O 3,Al 2 O 3,MnO 2,NiO和Fe 2 O 3,并且还包含ZrO 2和包含其的温度传感器。 该方法包括:称量传感器元件的组合物; 混合组成; 在约1000℃〜1400℃下煅烧混合物30分钟〜5小时; 粉碎煅烧的混合物以获得粉末; 将粉末型混合物置于模具中; 将多根引线平行插入粉末型混合物中; 加压成型粉末型混合物; 并在约1300℃〜1500℃下烧结加压成型材料30分钟〜5小时。
摘要:
Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.
摘要:
The invention is an electrical component with a body element comprising an organic substrate portion and a laser formed, resistor portion carburized thereon. A first electrical conductor is electrically connected to one location on the resistor portion so as to form one terminal for connection to an electrical circuit and a second electrical conductor is electrically connected to the resistor portion at a different location so as to form another terminal for connection to the electrical circuit.
摘要:
A process for the fabrication of thermistors is described. Conductive wires are positioned in a spaced fashion and are aligned so as to intersect one another. The wires are maintained in the above alignment and placed into a reaction chamber or other suitable environment in which chemical vapor deposition of a semiconductor material by a pyrolysis technique is produced. The temperature of the reaction chamber is preferably just below the temperature level needed to produce the vapor deposition. Electric current is preferably passed through the conductors causing them to heat at the region of the intersections to a level sufficient to induce vapor deposition. The semiconductor material is caused to be deposited upon the conductors in the region of the intersection and is continued until the semiconductor material substantially completely surrounds both of the wires in the region of the intersection so as to mechanically and electrically join the wires. The growth is continued until the thermistor of the desired characteristics is developed. Thereafter, two adjacent leads are removed leaving the remaining two leads projecting from the semiconductor material for use in coupling the thermistor to electrical circuits. The process when completed substantially provides a thermistor device which is ready for use without the need for performing additional steps of providing electrical terminations. The nature of the process also lends itself advantageously for producing thermistors on a large mass production scale.
摘要:
A TUNGSTEN CARBIDE COATING IS DEPOSITED UPON THE ELECTRICALLY HEATED SURFACE OF A PYROLYTIC CARBON COATED FUSED SILICA OR QUARTZ FIBER AAS IT IS PASSED THROUGH A LIQUID THERMALLY DECOMPOSABLE TUNGSTEN COMPOUND SUCH AS TUNGSTEN HEXACHLORIDE DISSOLVED IN A NON-POLAR ORGANIC SOLVENT SUCH AS BENZENE.
摘要:
This variable resistor uses a block cutout from pyrolytic graphite or its alloy whose electrical specific resistance in a crystal axis c is different from that in a crystal axis a. The block is provided at its diametrically opposite portions with a pair of contacts to form an electrical conductive passage therebetween. An angle theta of the electrical conductive passage inclined from the crystal axis a is made changeable to vary the resistance value across the pair of contacts.
摘要:
This invention relates to methods and apparatus for heating and/or coating articles and, in particular, to methods and apparatus for epitaxially depositing coatings of semiconductor material onto slices of such material. Accordingly, the general object of this invention is to provide new and improved methods and apparatus of such character.