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公开(公告)号:US20200098887A1
公开(公告)日:2020-03-26
申请号:US16143326
申请日:2018-09-26
申请人: Gilbert DEWEY , Van H. LE , Abhishek SHARMA , Jack T. KAVALIEROS , Sean MA , Seung Hoon SUNG , Nazila HARATIPOUR , Tahir GHANI , Justin WEBER , Shriram SHIVARAMAN
发明人: Gilbert DEWEY , Van H. LE , Abhishek SHARMA , Jack T. KAVALIEROS , Sean MA , Seung Hoon SUNG , Nazila HARATIPOUR , Tahir GHANI , Justin WEBER , Shriram SHIVARAMAN
IPC分类号: H01L29/51 , H01L29/786 , H01L29/49 , H01L29/417 , H01L27/088 , H01L29/66
摘要: Embodiments herein describe techniques for a transistor above the substrate. The transistor includes a first gate dielectric layer with a first gate dielectric material above a gate electrode, and a second dielectric layer with a second dielectric material above a portion of the first gate dielectric layer. A first portion of a channel layer overlaps with only the first gate dielectric layer, while a second portion of the channel layer overlaps with the first gate dielectric layer and the second dielectric layer. A first portion of a contact electrode overlaps with the first portion of the channel layer, and overlaps with only the first gate dielectric layer, while a second portion of the contact electrode overlaps with the second portion of the channel layer, and overlaps with the first gate dielectric layer and the second dielectric layer. Other embodiments may be described and/or claimed.
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公开(公告)号:US20200098875A1
公开(公告)日:2020-03-26
申请号:US16142036
申请日:2018-09-26
申请人: Seung Hoon SUNG , Justin WEBER , Matthew METZ , Arnab SEN GUPTA , Abhishek SHARMA , Benjamin CHU-KUNG , Gilbert DEWEY , Charles KUO , Nazila HARATIPOUR , Shriram SHIVARAMAN , Van H. LE , Tahir GHANI , Jack T. KAVALIEROS , Sean MA
发明人: Seung Hoon SUNG , Justin WEBER , Matthew METZ , Arnab SEN GUPTA , Abhishek SHARMA , Benjamin CHU-KUNG , Gilbert DEWEY , Charles KUO , Nazila HARATIPOUR , Shriram SHIVARAMAN , Van H. LE , Tahir GHANI , Jack T. KAVALIEROS , Sean MA
IPC分类号: H01L29/417 , H01L29/08 , H01L29/205 , H01L29/49 , H01L29/45 , H01L29/786 , H01L29/66 , H01L21/02 , H01L27/108 , H01L29/267
摘要: Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a contact electrode having a conductive material above the substrate, an epitaxial layer above the contact electrode, and a channel layer including a channel material above the epitaxial layer and above the contact electrode. The channel layer is in contact at least partially with the epitaxial layer. A conduction band of the channel material and a conduction band of a material of the epitaxial layer are substantially aligned with an energy level of the conductive material of the contact electrode. A bandgap of the material of the epitaxial layer is smaller than a bandgap of the channel material. Furthermore, a gate electrode is above the channel layer, and separated from the channel layer by a gate dielectric layer. Other embodiments may be described and/or claimed.
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