公开(公告)号：US20070104680A1

公开(公告)日：2007-05-10

申请号：US11504768

申请日：2006-08-16

申请人： Giorgio Trinchieri ,  Bice Perussia ,  Stanley Wolf ,  Steven Clark ,  Gordon Wong ,  Rodney Hewick ,  Michiko Kobayashi

发明人： Giorgio Trinchieri ,  Bice Perussia ,  Stanley Wolf ,  Steven Clark ,  Gordon Wong ,  Rodney Hewick ,  Michiko Kobayashi

IPC分类号： A61K38/19 ,  A61K38/20 ,  A61K38/18 ,  C07K14/52 ,  C07H21/04 ,  C12P21/02

CPC分类号： C07K14/5434 ,  A61K38/00 ,  C07K14/52

摘要： This application relates to antibodies reactive with a novel homogenous human cytokine, Natural Killer Stimulator Factor (NKSF), having the ability to induce the production of gamia interferon in vitro in human peripheral blood lymphocytes, and a pharmaceutical preparation containing such antibodies.

摘要翻译： 本申请涉及具有在人外周血淋巴细胞中诱导体外产生血浆干扰素的能力的新型均质人细胞因子（Natural Killer Stimulator Factor，NKSF）的抗体的抗体和含有该抗体的药物制剂。

公开(公告)号：US4495220A

公开(公告)日：1985-01-22

申请号：US540064

申请日：1983-10-07

申请人： Stanley Wolf ,  Warren C. Atwood

发明人： Stanley Wolf ,  Warren C. Atwood

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/312

CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  Y10S438/945 ,  Y10S438/963

摘要： A technique for employing polyimide as an inter-metal dielectric layer, while avoiding the difficulties usually associated with this material. An upper layer of silicon dioxide is employed as a hard mask over the polyimide, and is highly doped with phosphorous to prevent thermal cracking. Via holes are formed in a multi-stage etching process that includes a first dry-etching step that effects isotropic etching to form holes with desirably sloped sidewalls, and a second dry-etching step that effects anisotropic etching to extend the via holes through to a lower metal surface without significantly enlarging the holes in width. Finally, a dry-etching step is used to remove any residue of polyimide and to strip the silicon dioxide layer from over the polyimide. The bottom of the hole is then sputter-etched prior to metallization. In one preferred form of the method, a lower layer of silicon dioxide is formed between the lower metal layer and the polyimide layer, to facilitate removal of polyimide residue and to act as a barrier between the lower metal and the polyimide.

摘要翻译： 使用聚酰亚胺作为金属间介电层的技术，同时避免了通常与该材料相关的困难。 在聚酰亚胺上使用二氧化硅上层作为硬掩模，并且高度掺杂有磷以防止热裂解。 在多级蚀刻工艺中形成通孔，其包括实现各向同性蚀刻以形成具有期望的倾斜侧壁的孔的第一干蚀刻步骤，以及第二干蚀刻步骤，其实现各向异性蚀刻以将通孔延伸到 下部金属表面，而不会明显扩大孔的宽度。 最后，使用干蚀刻步骤去除聚酰亚胺的任何残余物并从聚酰亚胺上剥离二氧化硅层。 然后在金属化之前对孔的底部进行溅射蚀刻。 在该方法的一个优选形式中，在下金属层和聚酰亚胺层之间形成下层二氧化硅，以便于去除聚酰亚胺残留物并用作下金属和聚酰亚胺之间的阻挡层。